zener diode z applications constant voltage control z features 1) 2-pin ultra mini-mold type for high-density mounting . 2) high reliability. 3) can be mounted automatically, using chip mounter. z construction silicon epitaxial planar z absolute maximum ratings symbol unit pmw tj tstg topr parameter junction temperature storage temperature power dissipation operating temperature -55 to +150 limits 150 -55 to +150 150 sod-523 1 2 ledz*bt1g series 2 anode 1 cathode ordering information device package shipping ledz*bt1g sod-523 3000/tape&reel pb-free package is available ledz*bt3g sod-523 10000/tape&reel z z type no. type type no. type type no. 62 ledz 12bt1g 25 ledz 3.9bt1g 72 ledz 13bt1g 35 ledz 4.3bt1g 82 ledz 15bt1g 45 ledz 4.7bt1g 92 ledz 16bt1g 55 ledz 5.1bt1g a 2 ledz 18bt1g 65 ledz 5.6bt1g c2 ledz 20bt1g 75 ledz 6.2bt1g e2 ledz 22bt1g 85 ledz 6.8bt1g f2 ledz 24bt1g 95 ledz 7.5bt1g h2 ledz 27bt1g a 5 ledz 8.2bt1g j2 ledz 30bt1g c5 ledz 9.1bt1g l2 ledz 33bt1g e5 ledz 36bt1g f5 leshan radio company, ltd. 1/5 ledz 3.6bt1g ledz 2.4bt1g ledz 2.7bt1g ledz 10bt1g 05 ledz 11bt1g 15 ledz 3.0bt1g ledz 3.3bt1g 22 32 42 52
electrical characteristics (ta=25 c) min. max. iz(ma) max. iz(ma) max. iz(ma) max. vr(v) ledz5.1bt1g 4.980 5.200 5.0 80 5.0 500.0 0.5 2.0 1.5 ledz5.6bt1g 5.490 5.730 5.0 60 5.0 200.0 0.5 1.0 2.5 ledz6.2bt1g 6.060 6.330 5.0 60 5.0 100.0 0.5 1.0 3.0 ledz6.8bt1g 6.650 6.930 5.0 40 5.0 60.0 0.5 0.5 3.5 ledz7.5bt1g 7.280 7.600 5.0 30 5.0 60.0 0.5 0.5 4.0 ledz8.2bt1g 8.020 8.360 5.0 30 5.0 60.0 0.5 0.5 5.0 ledz9.1bt1g 8.850 9.230 5.0 30 5.0 60.0 0.5 0.5 6.0 ledz10bt1g 9.770 10.210 5.0 30 5.0 60.0 0.5 0.1 7.0 ledz11bt1g 10.760 11.220 5.0 30 5.0 60.0 0.5 0.1 8.0 ledz12bt1g 11.740 12.240 5.0 30 5.0 80.0 0.5 0.1 9.0 ledz13bt1g 12.910 13.490 5.0 37 5.0 80.0 0.5 0.1 10.0 ledz15bt1g 14.340 14.980 5.0 42 5.0 80.0 0.5 0.1 11.0 ledz16bt1g 15.850 16.510 5.0 50 5.0 80.0 0.5 0.1 12.0 ledz18bt1g 17.560 18.350 5.0 65 5.0 80.0 0.5 0.1 13.0 ledz20bt1g 19.520 20.390 5.0 85 5.0 100.0 0.5 0.1 15.0 ledz22bt1g 21.540 22.470 5.0 100 5.0 100.0 0.5 0.1 17.0 ledz24bt1g 23.720 24.780 5.0 120 5.0 120.0 0.5 0.1 19.0 ledz27bt1g 26.190 27.530 2.0 150 2.0 150.0 0.5 0.1 21.0 ledz30bt1g 29.190 30.690 2.0 200 2.0 200.0 0.5 0.1 23.0 ledz33bt1g 32.150 33.790 2.0 250 2.0 250.0 0.5 0.1 25.0 ledz36bt1g 35.070 36.870 2.0 300 2.0 300.0 0.5 0.1 27.0 symbol zener voltage vz(v) typ. operating resistance zz( ) rising operating resistance zz( ) reverse current ir(ua ) leshan radio company, ltd. ledz*bt1g series 2/5 5.0 100 5.0 1000.0 1.0 10.0 1.0 5.0 100 5.0 1000.0 1.0 5.0 1.0 ledz4.3bt1g 4.170 4.430 5.0 100 5.0 1000.0 1.0 5.0 1.0 ledz4.7bt1g 4.550 4.750 5.0 100 5.0 800.0 0.5 2.0 1.0 ledz3.6bt1g 3.600 3.845 ledz3.9bt1g 3.890 4.160 5.0 100 5.0 1000.0 0.5 100 1.0 ledz3.0bt1g 3.01 3.22 5.0 120 5.0 1000.0 0.5 50 1.0 ledz4.7bt1g 3.32 3.53 5.0 120 5.0 1000.0 0.5 20 1.0 ledz2.4bt1g 2.43 2.63 5.0 110 5.0 1000.0 0.5 100 1.0 ledz2.7bt1g 2.69 2.91
power dissipation:pd(mw) time:t(ms) prsm-time characteristics temp.coefficience:z(/) zener voltagevz(v) z-vz characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) reverse surge maximum power:prsm(w) 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=10ma if=100ma 300us time mounted on epoxy board 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 0.1 1 10 100 1000 10000 0.001 0.01 0.1 1 10 100 t prsm 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 3.6 22 18 16 15 13 12 11 10 9.1 8.2 7.5 6.8 5.1 6.2 5.6 4.7 4.3 3.9 33 30 36 20 27 24 zener current:iz(ma) zener voltage:vz(v) vz-iz characteristics -0.08 -0.06 -0.04 -0.02 0 0.02 0.04 0.06 0.08 0.1 0.12 0 10203040 -5 0 5 10 15 20 25 30 35 40 ambient temperature:ta() pd-tacharacteristics temp.coefficience:z(mv/) z electrical characteristic curves (ta=25 c) leshan radio company, ltd. 3/5 ledz*bt1g series
1 10 100 0123456 zener voltagevz(v) vz-iz characteristics zener current:iz(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vz dispersion map zener voltage:vz(v) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map zener current:iz(ma) zz-iz characteristics dynamic impedance:zz() f=1mh 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ta=25 vr=6.0v n=30pcs ave:0.0831na 0.0001 0.001 0.01 0.1 1 10 100 0123456 ta=25 ta=125 ta=75 ta=-25 1 10 100 0.1 1 10 8.9 9 9.1 9.2 9.3 9.4 ave:9.138v ta=25 iz=5ma n=25 0 10 20 30 40 50 60 70 80 90 100 ave:37.50pf ta=25 f=1mhz vr=0v n=10pcs 0.001 0.01 0.1 1 10 7891011 ta=75 ta=-25 ta=125 ta=25 leshan radio company, ltd. 4/5 ledz*bt1g series
sc - 79/sod - 523 a d e b p v ma scale 0.5 1mm 0 a c h e outline version references european projection dimensions (mm are the original dimensions) unit a b p cdeh e v mm 0.7 0.35 0.2 1.3 0.9 1.7 0.15 0.5 0.25 0.1 1.1 0.7 1.5 note 1. the marking bar indicates the cathode. issue date iec jedec eiaj sod523 sc-79 98-11-25 leshan radio company, ltd. 5/5 ledz*bt1g series
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